Till startsida
To content Read more about how we use cookies on gu.se

Solar cell breakthrough paves the way for new applications

News: Sep 13, 2017

An international scientific collaboration has successfully integrated a sub-micron thin, nanophotonic silicon film into a crystalline solar cell for the first time.

Thinner crystalline silicon cells absorb less light. While the addition of nanophotonic structures can strongly improve light absorption, their integration into the cells has been challenging thus far, due to the electrical losses they cause.

However, the research, published recently in the journal Nano Futures, demonstrates that the newly-developed film improves light absorption of the crystalline silicon cells, without compromising on electrical efficiency.

The researchers hope their discovery could open the door to new applications for crystalline silicon cells, such as flexibility or semi-transparency, which are not possible with current – much thicker – wafer-based cells.

Standard solar cells feature micron-scale surface textures to enhance the absorption and trapping of light. Shrinking the features to the nanoscale can improve the optical properties even further, and results in less material waste during fabrication. However, nanoscale features so far sacrificed electronic performance, limiting the solar cells’ overall energy-conversion efficiencies.

The cost of silicon, meanwhile, contributes significantly to the overall price of solar cells, and manufacturers have a strong incentive to make devices that use ever-thinner layers of the material. Crystalline silicon is not a strong absorber of light – especially at long wavelengths – meaning photons can pass through silicon films that are too thin before their energy can be deposited in the cell.
The research team started by separating a micron thick silicon film from a monocrystalline wafer. Conventional methods of slicing thin sections from bulk silicon result in a loss of material from the cut – termed “kerf loss”. The team instead used the kerfless “empty-space-in-silicon technique”, which makes more efficient use of the raw material.

This process involves the etching of an array of narrow pits on the silicon which, upon annealing, form a single planar void beneath the surface. The thin layer remaining above the void can undergo passivation and metallization before being bonded to a low-cost substrate and removed.

Surface nanopatterns with amorphous order can improve silicon’s light-absorption properties, compared to perfectly periodic structures. The researchers imprinted a nanotexture by reactive ion etching (RIE) after shaping the mask from a self-assembled layer of charged polystyrene beads. The result was an imperfectly periodic pattern of gently sloping, rounded nanocups.

Compared to the microscale structures more commonly used on solar cells, the new technique represents a more efficient use of material, with far less silicon discarded during the patterning process. And, most of all, the nanoscale structures enables playing with the wave-nature of light, and strongly improves light capture.

Although surfaces of nanowires or nanocolumns have been shown previously to be even more effective absorbers of incident light, the hugely increased surface area leads to more surface recombination losses when used in solar cells. High-quality passivation layers and antireflective coatings are also difficult to apply to such surfaces, lowering the overall efficiency.

The method and pattern the team used represent the best compromise between these conflicting needs, and yielded an overall conversion efficiency higher than any yet seen for a silicon film of such thinness.

A complete solar cell based on this nanophotonic structure, and using kerfless fabrication methods, could be as thin as desired, opening up uses not available to conventional devices.

Contacts: Alexander Dmitriev, Associate Professor, Bionanophotonics, Department of Physics, alexd@physics.gu.se, +46 70 842 3819


Contact Information

Carina Eliasson, Communications Officer

Visiting Address:
Guldhedsgatan 5 A

+ 46 31 786 98 73

Note of clarification

In case of doubt or confusion, the Swedish version of this press release takes precedence.

Page Manager: Erika Hoff|Last update: 3/8/2013

The University of Gothenburg uses cookies to provide you with the best possible user experience. By continuing on this website, you approve of our use of cookies.  What are cookies?